VESD05A1-02V-G-08【PDF 2/4 页】TVS DIODE 5V 192W SOD523

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VESD05A1-02V

www.vishay.com

Vishay Semiconductors

BiAs-MODE (bidirectional asymmetrical protection mode)

With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to

ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or

signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V RWM ) the protection diode

between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (V C ) is defined by the breakthrough voltage (V BR ) level plus the voltage drop at the series impedance

(resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of

the protection diode. The low forward voltage (V F ) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is bidirectional and

asymmetrical (BiAs).

L1

BiAs

20280

Ground

ELECTRICAL CHARACTERISTICS

(T amb = 25 °C, unless otherwise specified)

PARAMETER

Protection paths

Reverse stand off voltage

Reverse voltage

Reverse current

Reverse breakdown voltage

Reverse clamping voltage

Forward clamping voltage

Capacitance

TEST CONDITIONS/REMARKS

Number of lines which can be protected

Max. reverse working voltage

at I R = 1 μA

at V R = 5 V

at I R = 1 mA

at I PP = 1 A; 8/20 μs test pulse

at I PP = I PPM = 16 A; 8/20 μs test pulse

at I PP = 0.2 A; 8/20 μs test pulse

at I PP = 1 A; 8/20 μs test pulse

at I PP = I PPM = 16 A; 8/20 μs test pulse

at V R = 0 V; f = 1 MHz

at V R = 2.5 V; f = 1 MHz

SYMBOL

N channel

V RWM

V R

I R

V BR

V C

V C

V F

V F

V F

C D

C D

MIN.

-

-

5

-

6

-

-

-

-

-

-

-

TYP.

-

-

-

< 0.1

6.8

7.2

10.5

0.88

1

3.2

130

76

MAX.

1

5

-

1

7.5

8.5

12

1.1

1.5

4.5

150

-

UNIT

lines

V

V

μA

V

V

V

V

V

V

pF

pF

Rev. 1.1, 20-Jun-12

2

Document Number: 83369

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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